Faculty

  • Kibog Park (박기복)

  • Associate Professor
  • Experimental Condensed Matter Physics and Device Physics
  • Current Research Interests

    Professor Park’s research interests lie in exploring emergent (new) materials and device structures to overcome the limitations of the current devices in electronic/optoelectronic applications, and also developing novel quantum devices based on the manipulation and detection of unique quantum-mechanical degrees of freedom in condensed matter systems.

    More details are the followings.

    • Wide Band Gap Semiconductor (SiC, III-Nitride): Power and high frequency devices (SiC Schottky Diode, SiC MOSFET, Nitride HEMT), Electrical properties of extended and point defects
    • Epitaxial Graphene on SiC: Material growth, High frequency and quantum devices
    • Metal Oxides for High-K Gate Insulator and Novel Thin Film Devices: Advanced gate stack, Non-volatile memory, THz detector
    • Interface Charge/Spin Transport: Ballistic charge/spin transport across Interface (IPE, BEEM), Quantum transport and devices (2DEG at Heterostructure Interface, Quantum Computing
      Device)
  • Biographical Sketch

    Education

    • Ph.D.,  Physics,  The Ohio State University, U.S.A. (2000 – 2006)
    • M.S.,  Physics,  KAIST, Korea (South) (1996 – 1998)
    • B.S.,  Physics Education,  Seoul National University, Korea (South) (1990 – 1994)

    Professional Experiences

    • Associate Professor, Physics and Electrical and Computer Engineering at UNIST (2000 – 2006)
    • Assistant Professor, Electrical and Computer Engineering at UNIST (2009 – 2013)
    • Senior Process Engineer, Logic Technology Development at Intel Corporation (2006 – 2008)
    • Researcher in Central Research Center, Samsung SDI (1998 – 2000)
  • Selected Publications
    1. “Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature- Pressure-Strain Sensing”, Hanbyul Jin, Sungchul Jung, Junhyung Kim, Sanghyun Heo, Jaeik Lim, Wonsang Park, Hye Yong Chu, Franklin Bien*, and Kibog Park*, Scientific Reports 7, 10854 (2017)
    2. “Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer”, Hoon Hahn Yoon, Sungchul Jung, Gahyun Choi, Junhyung Kim, Youngeun Jeon, Yong Soo Kim, Hu Young Jeong, Kwanpyo Kim, Soon-Yong Kwon, and Kibog Park*, Nano Letters 17(1), 44 (2017)
    3. “Giant Electroresistance in Edge Metal-Insulator- Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields”, Sungchul Jung, Youngeun Jeon, Han Byul Jin, Jung-Yong Lee, Jae-Hyeon Ko, Nam Kim, Daejin Eom, and Kibog Park*, Scientific Reports 6, 30646 (2016)
    4. “Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate”, Gahyun Choi, Hoon Hahn Yoon, Sungchul Jung, Youngeun Jeon, Jung Yong Lee, Wook Bahng, and Kibog Park*, Appl. Phys. Lett. 107, 252101 (2015)
    5. “Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping”, Han Byul Jin, Youngeun Jeon, Sungchul Jung, Vijayakumar Modepalli, Hyun Suk Kang, Byung Cheol Lee, Jae-Hyeon Ko, Hyung-Joon Shin, Jung-Woo Yoo, Sung Youb Kim, Soon-Yong Kwon, Daejin Eom, and Kibog Park*, Scientific Reports 5, 9615 (2015)
    6. “Low-Temperature Formation of Epitaxial Graphene on 6H-SiC Induced by Continuous Electron Beam Irradiation”, Heungseok Go, Jinsung Kwak, Youngeun Jeon, Sung-Dae Kim, Byung Cheol Lee, Hyun Suk Kang, Jae-Hyeon Ko, Nam Kim, Bum-Kyu Kim, Jung-Woo Yoo, Sung Youb Kim, Young-Woon Kim, Soon-Yong Kwon, and Kibog Park*, Appl. Phys. Lett. 101, 092105 (2012)
    7. “Near room-temperature synthesis of transfer-free graphene films”, Jinsung Kwak, Jae Hwan Chu, Jae-Kyung Choi, Soon-Dong Park, Heungseok Go, Sung Youb Kim, Kibog Park, Sung-Dae Kim, Young-Woon Kim, Euijoon Yoon, Suneel Kodambaka, and Soon-Yong Kwon, Nature Communications 3, 645 (2012)
    8. “Dependence of Spontaneous Polarization on Stacking Sequence in SiC revealed by local Schottky barrier height variations over a partially-formed 8H-SiC layer on a 4H-SiC substrate”, Kibog Park*, Heung Seok Go, Youngeun Jeon, Jonathan P. Pelz, Xuan Zhang, and Marek Skowronski, Appl. Phys. Lett. 99, 252102 (2011)
    9. “Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface”, W. Cai, K.-B. Park, and J. P. Pelz,  Phys. Rev. B 80, 165322 (2009)
    10. “Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts : Cubic inclusions in hexagonal SiC”, K.-B. Park, Y. Ding, J. P. Pelz, M. K. Mikhov, Y. Wang, and B. J. Skromme, Appl. Phys. Lett. 86, 222109 (2005)
    11. “Quantum well state of self-forming 3C-SiC inclusions in 4H-SiC determined by ballistic electron emission microscopy”, Y. Ding, K.-B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, B. J. Skromme, H. Meidia, and S. Mahajan, Phys. Rev. B 69, 041305(R) (2004)