Solid-state quantum information using point defects in wide-gap semiconductors
- Speaker :
서호성 교수/Hosung Seo
Affiliation : 아주대학교
Date : October 5, 2018 2:00 PM
Place : Buliding 110 Room N102
Contact : firstname.lastname@example.org
Host : Prof.Noejung Park
Recently, significant progress has been made toward full control of the quantum states of
spins and charges in a variety of semiconductors and solid-state nanostructures for
applications in quantum information processing, quantum optics, and quantum sensing.
Such platforms include the NV center in diamond, dopants in silicon, single-photon
emitters in 2-dimensional crystals, and solid-state quantum dots. Being in the solid-state,
the listed platforms also have a significant potential for scalability. In this talk, I will
highlight some of our recent efforts devoted to defect spin qubits in wide-gap
semiconductors. In the first part of the talk, I will explain basic concepts of using point
defects in semiconductors as qubits and their applications. Then, I will describe our
recent combined theoretical and experimental study on remarkably robust quantum
coherence found in the divacancy qubits in silicon carbide. We used a quantum bath
model combined with a cluster expansion method to identify the microscopic
mechanisms behind the unusually long coherence times of the divacancy spins in SiC.
Second, we will discuss computational defect designs to search for promising defect
candidates in a variety of heterogeneous semiconductors toward scalable and coherent
hybrid quantum systems.