Kibog Park (박기복)
- Professor
- Experimental Condensed Matter Physics and Device Physics
Current Research Interests
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- kibogpark@unist.ac.kr
- Emergent Materials & Devices Lab
- Office : 108) 501-11
- Phone : +82-52-217-2111
- Lab : 108) 503
- Lab Phone :
Professor Park’s research interests lie in exploring emergent (new) materials and device structures to overcome the limitations of the current devices in electronic/optoelectronic applications, and also developing novel quantum devices based on the manipulation and detection of unique quantum-mechanical degrees of freedom in condensed matter systems.
More details are the followings.
- Wide Band Gap Semiconductor (SiC, III-Nitride): Power and high frequency devices (SiC Schottky Diode, SiC MOSFET, Nitride HEMT), Electrical properties of extended and point defects
- Epitaxial Graphene on SiC: Material growth, High frequency and quantum devices
- Metal Oxides for High-K Gate Insulator and Novel Thin Film Devices: Advanced gate stack, Non-volatile memory, THz detector
- Interface Charge/Spin Transport: Ballistic charge/spin transport across Interface (IPE, BEEM), Quantum transport and devices (2DEG at Heterostructure Interface, Quantum Computing Device)
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Biographical Sketch
Education
- Ph.D., Physics, The Ohio State University, U.S.A. (2000 – 2006)
- M.S., Physics, KAIST, Korea (South) (1996 – 1998)
- B.S., Physics Education, Seoul National University, Korea (South) (1990 – 1994)
Professional Experiences
- Associate Professor, Physics and Electrical and Computer Engineering at UNIST (2013 – Present)
- Assistant Professor, Electrical and Computer Engineering at UNIST (2009 – 2013)
- Senior Process Engineer, Logic Technology Development at Intel Corporation (2006 – 2008)
- Researcher in Central Research Center, Samsung SDI (1998 – 2000)
Selected Publications
- “Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature- Pressure-Strain Sensing”, Hanbyul Jin, Sungchul Jung, Junhyung Kim, Sanghyun Heo, Jaeik Lim, Wonsang Park, Hye Yong Chu, Franklin Bien*, and Kibog Park*, Scientific Reports 7, 10854 (2017)
- “Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer”, Hoon Hahn Yoon, Sungchul Jung, Gahyun Choi, Junhyung Kim, Youngeun Jeon, Yong Soo Kim, Hu Young Jeong, Kwanpyo Kim, Soon-Yong Kwon, and Kibog Park*, Nano Letters 17(1), 44 (2017)
- “Giant Electroresistance in Edge Metal-Insulator- Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields”, Sungchul Jung, Youngeun Jeon, Han Byul Jin, Jung-Yong Lee, Jae-Hyeon Ko, Nam Kim, Daejin Eom, and Kibog Park*, Scientific Reports 6, 30646 (2016)
- “Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate”, Gahyun Choi, Hoon Hahn Yoon, Sungchul Jung, Youngeun Jeon, Jung Yong Lee, Wook Bahng, and Kibog Park*, Appl. Phys. Lett. 107, 252101 (2015)
- “Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping”, Han Byul Jin, Youngeun Jeon, Sungchul Jung, Vijayakumar Modepalli, Hyun Suk Kang, Byung Cheol Lee, Jae-Hyeon Ko, Hyung-Joon Shin, Jung-Woo Yoo, Sung Youb Kim, Soon-Yong Kwon, Daejin Eom, and Kibog Park*, Scientific Reports 5, 9615 (2015)
- “Low-Temperature Formation of Epitaxial Graphene on 6H-SiC Induced by Continuous Electron Beam Irradiation”, Heungseok Go, Jinsung Kwak, Youngeun Jeon, Sung-Dae Kim, Byung Cheol Lee, Hyun Suk Kang, Jae-Hyeon Ko, Nam Kim, Bum-Kyu Kim, Jung-Woo Yoo, Sung Youb Kim, Young-Woon Kim, Soon-Yong Kwon, and Kibog Park*, Appl. Phys. Lett. 101, 092105 (2012)
- “Near room-temperature synthesis of transfer-free graphene films”, Jinsung Kwak, Jae Hwan Chu, Jae-Kyung Choi, Soon-Dong Park, Heungseok Go, Sung Youb Kim, Kibog Park, Sung-Dae Kim, Young-Woon Kim, Euijoon Yoon, Suneel Kodambaka, and Soon-Yong Kwon, Nature Communications 3, 645 (2012)
- “Dependence of Spontaneous Polarization on Stacking Sequence in SiC revealed by local Schottky barrier height variations over a partially-formed 8H-SiC layer on a 4H-SiC substrate”, Kibog Park*, Heung Seok Go, Youngeun Jeon, Jonathan P. Pelz, Xuan Zhang, and Marek Skowronski, Appl. Phys. Lett. 99, 252102 (2011)
- “Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface”, W. Cai, K.-B. Park, and J. P. Pelz, Phys. Rev. B 80, 165322 (2009)
- “Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts : Cubic inclusions in hexagonal SiC”, K.-B. Park, Y. Ding, J. P. Pelz, M. K. Mikhov, Y. Wang, and B. J. Skromme, Appl. Phys. Lett. 86, 222109 (2005)
- “Quantum well state of self-forming 3C-SiC inclusions in 4H-SiC determined by ballistic electron emission microscopy”, Y. Ding, K.-B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, B. J. Skromme, H. Meidia, and S. Mahajan, Phys. Rev. B 69, 041305(R) (2004)