연구실Next-Gen Qubit and Semiconductor Materials Laboratory
Current Research Interests
Next-Generation Qubit and Semiconductor Materials Laboratory
Our lab is dedicated to the discovery and development of advanced materials that underpin future quantum information technologies and next-generation semiconductor devices. Our research focuses on the design, synthesis, and characterization of quantum materials, semiconductor materials, thin films, and heterostructures that can enable qubit functionalities and emergent quantum phenomena. In particular, we investigate how precise control of defects, spins, charges, lattices, and interfaces can be used to build robust and scalable material platforms for qubit operation, while also exploring their integration with semiconductor processing and device architectures. By combining fundamental studies of material physics with crystal growth, thin-film fabrication, structural and electronic characterization, and device evaluation, our laboratory aims to establish the physical principles and material foundations required for future quantum computing and intelligent semiconductor technologies.
• Development of optimized oxide-wafer process for alternative and innovative functional oxide single-crystal ingot.
• Discover of new quantum materials for manipulating large number of quantum states.
• Low-power/high-performance artificial synaptic materials using multiple polar sates and dielectric memory effect.
• Quantum phase transition in quantum materials induced by applying high magnetic field, high pressure, and chemical doping around the absolute zero temperature
7. Physical Review Letters 98, 016401 (2007), Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields