People

Professor

Professor

Kunook Chung정건욱

  • gallium nitride
  • graphene
  • light-emitting diode
  • light-emitting diodes
  • GaN
  • Semiconductor/2D heterostruct
  • threading dislocations

연구주제

Quatum materials and devices

  • 연구분야나노물질 ; 나노기기
  • 연구실Mixed Dimensional Materials and Devices Lab.

Current Research Interests

  • We are interested in utilizing unique physical properties of various low dimensional (D) nanomaterials, such as 2D van der Walls layered materials, 1D nanorods (and nanopillars), and 0D quantum dots, as key building blocks for fabricating high performance and new functional semiconductor optoelectronic devices. Details of the current research interests are:
  • Metal-organic chemical vapor deposition and chemical vapor deposition of high qualitysemiconductor microstructures and nanostructures, 2D van der Walls layered materials, and their hybrids.
  • Fabrications of high performance optoelectronic devices, such as light emitting diodes, solar cells, and sensors.
  • Strain engineering of semiconductor heterostructures and quantumstructures using nanofabrication and/or heteroepitaxial growth.
  • Diverse device applications including transferable and wearable devices, full-color inorganic microdisplays, augmented reality, quantum computing and communications, neural probes, and so on.

Biographical Sketch

  • Appointments
  • Assistant Professor in Department of Physics, UNIST, Korea. (2019 – present)
  • Postdoctoral in Department of Electrical Engineering and Computer Science, University of Michigan, US. (2015 – 2019)
  • Postdoctoral in Department of Physics and Astronomy, Seoul National University, Korea. (2015)
  • Education
  • Ph.D. in Physics, Seoul National University, Korea. (2015)
  • Thesis : GaN microstructures and nanostructures grown on graphene for transferable device
  • applications (Advisor: Prof. Gyu-Chul Yi, Seoul National University).
  • B.S. in Physics, Seoul National University, Korea. (2009)

Selected Publications

  • In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes, NPG Asia Mater. 17, 13 (2025).
  • Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials, Journal of Information Display, 25, 75 (2024).
  • van der Waals integration of GaN light-emitting diode arrays on foreign graphene films using semiconductor/graphene heterostructures, NPG Asia Mater. 14, 57 (2022).
  • GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer, Nano Energy 60, 82 (2019).

Lab Introduction video

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