• Integration of Dissimilar Materials

  • Speaker : Ravi Droopad
    Affiliation : Ingram School of Engineering, Texas State University
    Date : January 17, 2019 3:30 PM
    Place : Bldg.108 Rm.401
    Contact :
    Host : 박기복/ Kibog Park
  • Abstract

  • Integration of a broad class of materials with mature existing semiconductor technology are becoming important areas of research to develop novel applications including new classes of 2D, ferroelectric and spintronic devices. Such materials include epitaxial oxides that represent an enabling technology for the integration of multifunctional oxide-based electronics with mature existing semiconductor applications. These crystalline oxides on semiconductors represent a path towards adding functionalities onto electronic and optoelectronic devices. In addition, they also being sought after as the gate dielectric in metal oxide semiconductor field effect transistors (MOSFETs) as they can provide an ideal interface with low density of defects. With the push for developing III-V semiconductors as new high mobility channels in complementary metal oxide semiconductor (CMOS) applications, it is also an opportune time to investigate the heterointegration of crystalline complex oxides with III-V semiconductors. In this presentation, I will first outline the challenges in the deposition of epitaxial oxides on semiconductors and the steps necessary to control the growth kinetics and its effects on the oxide/semiconductor interfacial properties.