• Solid-state quantum information using point defects in wide-gap semiconductors

  • Speaker : 서호성 교수/Hosung Seo
    Affiliation : 아주대학교
    Date : October 5, 2018 2:00 PM
    Place : Buliding 110 Room N102
    Contact :
    Host : Prof.Noejung Park
  • Abstract

  • Recently, significant progress has been made toward full control of the quantum states of
    spins and charges in a variety of semiconductors and solid-state nanostructures for
    applications in quantum information processing, quantum optics, and quantum sensing.
    Such platforms include the NV center in diamond, dopants in silicon, single-photon
    emitters in 2-dimensional crystals, and solid-state quantum dots. Being in the solid-state,
    the listed platforms also have a significant potential for scalability. In this talk, I will
    highlight some of our recent efforts devoted to defect spin qubits in wide-gap
    semiconductors. In the first part of the talk, I will explain basic concepts of using point
    defects in semiconductors as qubits and their applications. Then, I will describe our
    recent combined theoretical and experimental study on remarkably robust quantum
    coherence found in the divacancy qubits in silicon carbide. We used a quantum bath
    model combined with a cluster expansion method to identify the microscopic
    mechanisms behind the unusually long coherence times of the divacancy spins in SiC.
    Second, we will discuss computational defect designs to search for promising defect
    candidates in a variety of heterogeneous semiconductors toward scalable and coherent
    hybrid quantum systems.